triquint semiconductor texas : phone (972)994-8 465 fax (972)994 8504 web: www.triquint.com product datasheet 1 rev 4/07 2-10 ghz gain block amplifier TGA8810-SCC key features and performance ? 2 to 10-ghz frequency range ? operates from single 5-v supply ? unconditionally stable ? 17-db typical gain ? typical 0.6-db gain flatness ? 1,8796 x 1,6510 x 0,1524 mm (0.074 x 0.065 x 0.006 in.) the triquint TGA8810-SCC is a self-biased general purpose amplifier. two gain stages employ shunt feedback to produce flat gain to 10-ghz. output power at 1-db gain compression is typically 17-dbm and noise figure is 6-db. the TGA8810-SCC uses on-chip dc blocks to allow direct cascading. three different on-chip self-bias resistors provide the flexibilit y of selecting bias current and rf performance. the TGA8810-SCC is available in chip form and is readily assembled using automated equipment. bond pad and backside metallization is gold plated for co mpatibility with eutectic al loy attachment methods as well as the thermocompression and thermosonic wire-bonding processes. april 3, 2007
triquint semiconductor texas : phone (972)994-8 465 fax (972)994 8504 web: www.triquint.com product datasheet 2 rev 4/07 TGA8810-SCC table i maximum ratings symbol parameter value v + positive supply voltage v d1 , v d2 8.5 v i - negative supply current -2.91ma p d power dissipation at (or below) 25 c base-plate temperature * 2.4 w t ch ** operating channel temperature 150 0 c t m mounting temperature (30 seconds) 320 0 c t stg storage temperature -65 to 150 0 c ratings over channel temperature range, t ch (unless otherwise noted) stresses beyond those listed under ?maximum ratings? may cause permanent damage to the device. these are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under ?rf characteristics? is not implied. exposure to maximum rated conditions for extended periods may affect device reliability. *for operation above 25 c base-plate temperature, derate linearly at the rate of 5mw/ c. ** operating channel temperature, t ch , directly affects the device mttf. for maximum life, it is recommended that channel temperature be maintained at the lowest possible level. table ii dc specifications (100%) (t a = 25 c + 5 c) notes symbol test conditions 2/ limits units min max i dss1 std 50 150 ma i dss2 std 50 150 ma g m1 std 70 140 ms g m2 std 70 140 ms 1/,3 / |v p1 |s t d 0 . 5 2.3 v 1/,3 / |v p2 |s t d 0 . 5 2.3 v 1/,3 / |v bvgd1 |s t d 6 30 v 1/,3 / |v bvgd2 |s t d 6 30 v 1/,3 / |v bvgs1 |s t d 6 30 v 1/ v p , v bvgd , and v bvgs are negative. 2/ the measurement conditions are subject to change at the manufacture?s discretion (with appropriate notification to the buyer). 3/ std refers to standard test conditions, see table iv.
triquint semiconductor texas : phone (972)994-8 465 fax (972)994 8504 web: www.triquint.com product datasheet 3 rev 4/07 TGA8810-SCC table iii rf specifications (t a = 25 c + 5 c) test measurement conditions value units v + = 5v, i + = 60ma self bias min typ max small-signal gain magnitude f = 2 ? 10 ghz 14 17 db input standing wave ratio f = 2 ? 10 ghz 1.9:1 output standing wave ratio f = 2 ? 10 ghz 1.2:1 small-signal gain ripple f = 2 ? 10 ghz 0.6 3.0 db power output at 1 db gain compression f = 2 ? 10 ghz 13 17 dbm noise figure f = 2 ? 10 ghz 6 7.5 db f = 2 ghz 7 db f = 2.5 ? 9 ghz 8 db f = 9.5 ghz 4 db input return loss magnitude f = 10 ghz 2 db f = 2 ? 2.5 ghz 9 db f = 3 ? 5.5 ghz 7.5 db output return loss magnitude f = 6 ? 10 ghz 9 db f = 2 ghz 24 dbm f = 5 ghz 26 dbm output third order intercept f = 8 ghz 25 dbm f = 2 ghz -0.01 db/ c f = 6 ghz -0.02 db/ c gain temperature coefficient (t bp = -40 c to 90 c) f = 10 ghz -0.02 db/ c
triquint semiconductor texas : phone (972)994-8 465 fax (972)994 8504 web: www.triquint.com product datasheet 4 rev 4/07 table iv autoprobe fet parameter measurement conditons fet parameters test conditions i dss : maximum drain current (i ds ) with gate voltage (v gs ) at zero volts. v gs = 0.0 v, drain voltage (v ds ) is swept from 0.5 v up to a maximum of 3.5 v in search of the maximum value of i ds ; voltage for i dss is recorded as vdsp. g m : transconductance; i dss ? ids1 () vg1 for all material types, v ds is swept between 0.5 v and vdsp in search of the maximum value of i ds . this maximum i ds is recorded as ids1. for intermediate and power material, ids1 is measured at v gs = vg1 = -0.5 v. for low noise, hfet and phemt material, v gs = vg1 = -0.25 v. for lnbecolc, use v gs = vg1 = -0.10 v. v p : pinch-off voltage; v gs for i ds = 0.5 ma/mm of gate width. v ds fixed at 2.0 v, v gs is swept to bring i ds to 0.5 ma/mm. v bvgd : breakdown voltage, gate-to-drain; gate-to- drain breakdown current (i bd ) = 1.0 ma/mm of gate width. drain fixed at ground, source not connected (floating), 1.0 ma/mm forced into gate, gate-to-drain voltage (v gd ) measured is v bvgd and recorded as bvgd; this cannot be measured if there are other dc connections between gate-drain, gate-source or drain-source. v bvgs : breakdown voltage, gate-to-source; gate-to- source breakdown current (i bs ) = 1.0 ma/mm of gate width. source fixed at ground, drain not connected (floating), 1.0 ma/mm forced into gate, gate-to- source voltage (v gs ) measured is v bvgs and recorded as bvgs; this cannot be measured if there are other dc connections between gate-drain, gate-source or drain-source. TGA8810-SCC
triquint semiconductor texas : phone (972)994-8 465 fax (972)994 8504 web: www.triquint.com product datasheet 5 rev 4/07 tga8810 - fixture data summary v+=5v, self biased, ta=25c s21 p1db s11 TGA8810-SCC 10 11 12 13 14 15 16 17 18 19 20 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 frequency (ghz) gain (db) 0 1 2 3 4 5 6 7 8 2.03.04.05.06.07.08.09.010.0 frequency (ghz) noise figure (db) noise figure 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 2345678910 frequency (ghz) pout @1db compression (dbm) -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 frequency (ghz) input return loss (db) -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 2.03.04.05.06.07.08.09.010.0 frequency (ghz) output return loss (db) s22
triquint semiconductor texas : phone (972)994-8 465 fax (972)994 8504 web: www.triquint.com product datasheet 6 rev 4/07 mechanical characteristics TGA8810-SCC gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test.
triquint semiconductor texas : phone (972)994-8 465 fax (972)994 8504 web: www.triquint.com product datasheet 7 rev 4/07 chip assembly and bonding diagram TGA8810-SCC gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test.
triquint semiconductor texas : phone (972)994-8 465 fax (972)994 8504 web: www.triquint.com product datasheet 8 rev 4/07 frequenc s 11 s 21 s 12 s 22 ga in (ghz) mag ang() mag ang() mag ang() mag ang() (db) 0.5 0.38 -104 0.03 -148 0.001 -13 0.92 -130 -30.8 1.0 0.29 -125 0.99 -177 0.003 180 0.79 165 -0.1 1.5 0.36 -134 4.24 114 0.009 122 0.48 111 12.5 2.0 0.40 -156 6.88 42 0.011 72 0.07 125 16.8 2.5 0.36 -169 7.49 -8 0.009 43 0.21 180 17.5 3.0 0.33 -173 7.58 -45 0.007 27 0.27 164 17.6 3.5 0.31 -175 7.59 -77 0.006 10 0.29 150 17.6 4.0 0.30 -175 7.53 -106 0.004 9 0.28 137 17.5 4.5 0.30 -176 7.36 -133 0.002 5 0.26 126 17.3 5.0 0.29 179 7.10 -157 0.002 2 0.22 115 17.0 5.5 0.31 -178 7.02 179 0.001 -53 0.17 109 16.9 6.0 0.33 179 6.98 156 0.001 -152 0.12 110 16.9 6.5 0.33 173 6.86 134 0.002 -178 0.07 111 16.7 7.0 0.32 166 6.90 113 0.003 169 0.04 120 16.8 7.5 0.29 156 7.01 90 0.004 173 0.02 140 16.9 8.0 0.23 140 7.22 67 0.005 168 0.00 2 17.2 8.5 0.15 110 7.48 43 0.007 177 0.02 0 17.5 9.0 0.11 33 7.75 15 0.009 175 0.03 24 17.8 9.5 0.24 -37 7.87 -15 0.011 170 0.06 52 17.9 10.0 0.44 -75 7.39 -49 0.013 162 0.09 58 17.4 10.5 0.64 -106 6.34 -83 0.016 153 0.11 51 16.0 typical s-parameters thermal information parameter test condition nom unit r jc thermal resistance (channel to backside) v + = 5v, self biased, ta=25 c 60 c/w TGA8810-SCC
triquint semiconductor texas : phone (972)994-8 465 fax (972)994 8504 web: www.triquint.com product datasheet 9 rev 4/07 reflow process assembly notes: ? ausn (80/20) solder with limited exposure to temperatures at or above 300 ? c ? alloy station or conveyor furnace with reducing atmosphere ? no fluxes should be utilized ? coefficient of thermal expansion matchi ng is critical for long-term reliability ? storage in dry nitrogen atmosphere component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets preferred method of pick up ? avoidance of air bridges during placement ? force impact critical during auto placement ? organic attachment can be used in low-power applications ? curing should be done in a convection ov en; proper exhaust is a safety concern ? microwave or radiant curing should not be used because of differential heating ? coefficient of thermal expansion matching is critical interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconnect technique ? force, time, and ultrasonics are critical parameters ? aluminum wire should not be used ? discrete fet devices with small pad sizes should be bonded with 0.0007-inch wire ? maximum stage temperature: 200 ? c gaas mmic devices are susceptible to damage from el ectrostatic discharge. proper precautions should be observed during handling, assembly and test. TGA8810-SCC
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